Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-220
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Country of Origin
China
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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Stock information temporarily unavailable.
P.O.A.
Each (In a Pack of 5) (Exc. VAT)
Standard
5
P.O.A.
Each (In a Pack of 5) (Exc. VAT)
Stock information temporarily unavailable.
Standard
5
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-220
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Country of Origin
China
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
