Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
250W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.4V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
JEDEC JESD97
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
€ 14.82
€ 7.41 Each (In a Pack of 2) (Exc. VAT)
€ 17.49
€ 8.744 Each (In a Pack of 2) (inc. VAT)
2
€ 14.82
€ 7.41 Each (In a Pack of 2) (Exc. VAT)
€ 17.49
€ 8.744 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | € 7.41 | € 14.82 |
| 20 - 98 | € 6.12 | € 12.24 |
| 100 - 198 | € 4.73 | € 9.46 |
| 200+ | € 4.26 | € 8.52 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
250W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.4V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
JEDEC JESD97
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
