STMicroelectronics STGW60V60DF, Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Operating Temperature
175°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
€ 35.80
€ 7.16 Each (In a Pack of 5) (Exc. VAT)
€ 42.24
€ 8.449 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 35.80
€ 7.16 Each (In a Pack of 5) (Exc. VAT)
€ 42.24
€ 8.449 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | € 7.16 | € 35.80 |
| 10 - 20 | € 6.90 | € 34.50 |
| 25+ | € 6.30 | € 31.50 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Operating Temperature
175°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products