STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 130 A, 710 V Enhancement, 3-Pin STY139N65M5

RS Stock No.: 783-3028PBrand: STMicroelectronicsManufacturers Part No.: STY139N65M5
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Technical Document

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

710V

Series

MDmesh M5

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

363nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

5.3 mm

Height

20.3mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

Country of Origin

China

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

€ 63.59

€ 63.59 Each (Supplied in a Tube) (Exc. VAT)

€ 75.04

€ 75.04 Each (Supplied in a Tube) (inc. VAT)

STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 130 A, 710 V Enhancement, 3-Pin STY139N65M5
Select packaging type

€ 63.59

€ 63.59 Each (Supplied in a Tube) (Exc. VAT)

€ 75.04

€ 75.04 Each (Supplied in a Tube) (inc. VAT)

STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 130 A, 710 V Enhancement, 3-Pin STY139N65M5

Stock information temporarily unavailable.

Select packaging type

Ideate. Create. Collaborate

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Technical Document

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

710V

Series

MDmesh M5

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

363nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

5.3 mm

Height

20.3mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

Country of Origin

China

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more